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Epitaxial integration of dissimilar semiconductors for infrared optoelectronics
Integrating dissimilar semiconductors on a single crystal platform can power the next generation of electronics and photonics applications. In such a platform, semiconductors like III-V and IV-VI materials can bring exciting new properties to the table and leverage the scale and functionality of conventional silicon technology. Integrating these dissimilar semiconductors, however, is quite the materials science challenge. These very differences in properties also lead to unusual interfaces and crystal defects such as dislocations that severely degrade device performance. I will discuss how we continue to understand why dislocations are bad for integrated telecom lasers on silicon using new microscopy and microanalysis tools, and talk about our progress in engineering defect tolerance in such devices using III-V (InAs) quantum dots. I will also present recent results from integrating mid-infrared IV-VI (PbSnSe) light emitters with application in sensors that appear to be naturally defect tolerant.
Kunal Mukherjee is an assistant professor in Materials Science and Engineering at Stanford and a Reid and Polly Anderson Faculty Fellow. He has been on the faculty of the Materials department at UC Santa Barbara (2016-2020), held postdoctoral appointments at IBM TJ Watson Research Center (2016) and MIT (2015), and worked on high-speed optoelectronic products for datacenters at Finisar Corporation (2009-2010). He holds a PhD in Materials Science and Engineering from MIT.